Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD826G 2SD826G

The 2SD826G is an NPN silicon transistor designed for flash circuits, part of the 2SD826 series with a hFE gain range of 280 to 560 at IC=0.5A and VCE=2V. It is packaged in a TO-126 case with dimensions of 8.0 mm in length, 5.51 mm in width, and 2.7 mm in height. The device has a collector-to-emitter voltage rating of 20 V, a collector current rating of 5 A, and a peak pulse collector current of 8 A. The collector-to-emitter saturation voltage is 0.5 V at IC=3A and IB=60mA. The transition frequency is 120 MHz, and the output capacitance is 45 pF at VCB=10V and f=1MHz. The operating junction temperature extends to 150°C, and storage temperatures range from -55°C to +150°C.