Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD768K01-E#00 2SD768K01-E#00

The 2SD768 is a silicon NPN epitaxial bipolar junction transistor designed for medium speed and power switching applications, typically paired with the 2SB727. It is packaged in a TO-220AB case with a maximum collector current of 6 A and a collector-to-emitter voltage rating of 120 V. The device dissipates up to 40 W at 25°C case temperature, with a junction temperature limit of 150°C. Electrical characteristics include a DC current gain (hFE) range of 1000 to 20000 at 3 A collector current, collector-emitter saturation voltage up to 3 V at 6 A, and turn-on and turn-off times of 1.0 ms and 3.0 ms respectively under specified test conditions. The part meets no stated industry standards beyond implicit compliance with general semiconductor operating limits.