Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD612KE 2SD612KE

The 2SD612KE is an NPN silicon power transistor for low-frequency amplifier applications, housed in a TO-126 package measuring 8.0 mm × 5.1 mm × 2.7 mm. It has a collector-to-emitter voltage rating of 35 V, a collector current rating of 2 A, and a collector dissipation of 10 W at Tc=25°C. The device has a minimum DC current gain (hFE) of 60 at IC=500 mA and a gain-bandwidth product of 100 MHz. It meets the RoHS standard and operates within a junction temperature range of -55°C to 150°C.