Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD467CTZ-E 2SD467CTZ-E

The 2SD467CTZ-E is a silicon NPN epitaxial bipolar junction transistor designed for low-frequency power amplification and used in complementary pairs with the 2SB561. It is packaged in a TO-92 (1) case with dimensions of 7.21 mm in length, 3.8 mm in width, and 4.8 mm in height, and weighs approximately 0.25 g. The device has a collector-to-emitter voltage rating of 20 V, a collector current rating of 0.7 A, and a power dissipation limit of 0.5 W. The junction temperature ranges from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) between 120 and 240, a collector-emitter saturation voltage of up to 0.5 V at 0.5 A collector current, and a gain-bandwidth product of 280 MHz. The part complies with RoHS standards.