The 2SD2161 is an NPN silicon epitaxial Darlington power transistor designed for low-frequency power amplification and low-speed switching in applications such as motor and solenoid drivers. It is housed in an isolated TO-220 package. The device has a collector-emitter voltage rating of 100 V, a collector current rating of 5.0 A DC, and a total power dissipation of 2.0 W at 25°C ambient temperature. The DC current gain is at least 2,000 at a collector-emitter voltage of 2.0 V and collector current of 2.0 A. It is classified as Standard quality grade for use in consumer, industrial, and office equipment.
Manufacturer: Renesas Electronics America
Win Source Part Number: 855302-2SD2161-AZ
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0075
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 855302-2SD2161-AZ |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - 2SD2161-AZ |
| Package Type | SOT3 |