Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD1816S-TL-HQ 2SD1816S-TL-HQ

Description
Manufacturer: ON Semiconductor Win Source Part Number: 906391-2SD1816S-TL-H Q Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 78 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0075
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 906391-2SD1816S-TL-H Q Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 78 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0075
Request a Quote
Datasheet
Datasheet Summary
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The 2SD1816 is an NPN bipolar transistor designed for high current switching applications such as relay drivers, inverters, and converters. It is available in IPAK and DPAK packages, with dimensions of 6.7 mm x 6.2 mm for the IPAK and 6.7 mm x 6.2 mm for the DPAK. The device has a collector-to-emitter voltage rating of 100 V, a collector current of 4 A, and a collector dissipation of 20 W at Tc=25°C. It features a low collector-to-emitter saturation voltage of up to 400 mV at IC=2 A and IB=0.2 A, a gain-bandwidth product of 180 MHz, and a turn-on time of 100 ns. The part meets RoHS and is halogen-free as indicated by the -H suffix in its ordering code.

Datasheet Summary
Powered by GS/AI

The 2SD1816 is an NPN bipolar transistor designed for high current switching applications such as relay drivers, inverters, and converters. It is available in IPAK and DPAK packages, with dimensions of 6.7 mm x 6.2 mm for the IPAK and 6.7 mm x 6.2 mm for the DPAK. The device has a collector-to-emitter voltage rating of 100 V, a collector current of 4 A, and a collector dissipation of 20 W at Tc=25°C. It features a low collector-to-emitter saturation voltage of up to 400 mV at IC=2 A and IB=0.2 A, a gain-bandwidth product of 180 MHz, and a turn-on time of 100 ns. The part meets RoHS and is halogen-free as indicated by the -H suffix in its ordering code.

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TRANSISTORS - Transistors (BJT) - Single - 2SD1816S-TL-HQ - 906391-2SD1816S-TL-HQ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1816S-TL-HQ
906391-2SD1816S-TL-HQ
TRANSISTORS - Transistors (BJT) - Single - 2SD1816S-TL-HQ 906391-2SD1816S-TL-HQ
Manufacturer: ON Semiconductor Win Source Part Number: 906391-2SD1816S-TL-H Q Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 78 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0075

Manufacturer: ON Semiconductor
Win Source Part Number: 906391-2SD1816S-TL-HQ
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0075

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 906391-2SD1816S-TL-HQ
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SD1816S-TL-HQ
Package Type SOT3
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