Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD1684S 2SD1684S

The 2SD1684S is a silicon NPN transistor in the TO-126ML package, designed for switching applications up to 100 V and 1.5 A. It features a maximum collector dissipation of 10 W at Tc=25°C and a junction temperature rating of 150°C. The transistor has a DC current gain (hFE) range of 140 to 280 at IC=100 mA, a collector-to-emitter saturation voltage of ≤500 mV at IC=500 mA and IB=50 mA, and a gain-bandwidth product of up to 120 MHz. The package includes a plastic-covered heat sink for high-density mounting. All specifications apply to the 2SD1684 series, of which this variant is a member with a mid-range hFE classification.