Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD1347S 2SD1347S

The 2SD1347 is an NPN silicon transistor designed for large-current driving applications such as power supplies, relay drivers, and lamp drivers. It is packaged in a TO-92-style case with dimensions of 6.0 mm in height, 5.0 mm in width, and 0.6 mm in thickness. The device has a collector-to-emitter voltage rating of 50 V, a collector current rating of 3 A, and a maximum collector dissipation of 1 W. Its junction temperature ranges up to 150 °C. The DC current gain (hFE) at IC = −100 mA and VCE = −2 V is classified as 140 to 280 for the S grade, and the collector-to-emitter saturation voltage at IC = −2 A and IB = −100 mA is −0.35 V typ. The gain-bandwidth product is 150 MHz. The part is not rated for high-reliability applications such as life-support systems.