Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD1229 2SD1229

Description
Manufacturer: ON Semiconductor Win Source Part Number: 855267-2SD1229 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 855267-2SD1229 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095
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Datasheet
Datasheet Summary
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The 2SD1229 is an NPN epitaxial planar silicon Darlington transistor designed for motor driver, printer hammer driver, relay driver, and voltage regulator control applications. It is packaged in a TO-3PB case with dimensions of 15.6 mm length, 4.8 mm width, and 14.0 mm height. The device has a collector-to-emitter voltage rating of 60 V, a collector current rating of 10 A, and a collector dissipation of 60 W at Tc=25°C. It features a minimum DC current gain of 2000 at IC=5 A and VCE=2 V, a collector-to-emitter saturation voltage of 0.9 V to 1.5 V at IC=5 A and IB=10 mA, and a gain-bandwidth product of 20 MHz. The junction temperature range is from -55°C to 150°C.

Datasheet Summary
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The 2SD1229 is an NPN epitaxial planar silicon Darlington transistor designed for motor driver, printer hammer driver, relay driver, and voltage regulator control applications. It is packaged in a TO-3PB case with dimensions of 15.6 mm length, 4.8 mm width, and 14.0 mm height. The device has a collector-to-emitter voltage rating of 60 V, a collector current rating of 10 A, and a collector dissipation of 60 W at Tc=25°C. It features a minimum DC current gain of 2000 at IC=5 A and VCE=2 V, a collector-to-emitter saturation voltage of 0.9 V to 1.5 V at IC=5 A and IB=10 mA, and a gain-bandwidth product of 20 MHz. The junction temperature range is from -55°C to 150°C.

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TRANSISTORS - Transistors (BJT) - Single - 2SD1229 - 855267-2SD1229 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1229
855267-2SD1229
TRANSISTORS - Transistors (BJT) - Single - 2SD1229 855267-2SD1229
Manufacturer: ON Semiconductor Win Source Part Number: 855267-2SD1229 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: ON Semiconductor
Win Source Part Number: 855267-2SD1229
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 855267-2SD1229
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SD1229
Package Type SOT3
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