Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SD1134C-E 2SD1134C-E

The 2SD1134 is a silicon NPN triple diffused transistor designed for low-frequency power amplifier applications as a complementary pair with 2SB858. It is packaged in a TO-220AB case with a collector flange. The device has a collector-to-emitter voltage rating of 60 V, a collector current rating of 4 A, and a collector power dissipation of 40 W at 25°C. The junction and storage temperature ranges are from -45°C to 150°C. DC current transfer ratio (hFE) ranges from 60 to 320, grouped in B, C, D bins. The collector-to-emitter saturation voltage is 1 V maximum at 2 A collector current and 0.2 A base current.