Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC5850LCTL-E 2SC5850LCTL-E

The 2SC5850LCTL-E is a silicon NPN bipolar junction transistor for low-frequency amplification, housed in a CMPAK package with dimensions of 1.8 mm × 1.15 mm × 1.0 mm and a mass of 0.006 g. It has a collector-to-emitter voltage rating of 40 V, a collector current rating of 100 mA, and a collector power dissipation of 150 mW on a glass epoxy board. The DC current gain (hFE) is grouped in the C range, from 160 to 320, with a base-to-emitter voltage of up to 0.75 V at I_C = 2 mA. The device is rated for a junction temperature of 150°C and operates within a storage temperature range of -55°C to +125°C. It meets RoHS compliance and is supplied on a 178 mm reel with 8 mm emboss taping, 3000 units per reel.