Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC5610 2SC5610

The 2SC5610 is an NPN epitaxial planar silicon transistor for DC/DC converter applications, including relay, lamp, motor, and strobe drivers. It is packaged in a TO220ML case with dimensions of 10.0 mm in length, 4.5 mm in width, and 2.55 mm in thickness. The transistor has a collector-to-emitter voltage rating of 50 V, a collector current rating of 7 A, and a collector dissipation of 18 W at Tc=25°C. It features a low collector-to-emitter saturation voltage of up to 330 mV at IC=2.5 A and IB=125 mA, and a high DC current gain of 150 to 300 at VCE=2 V and IC=1 A. The gain-bandwidth product is 290 MHz, and switching times include a turn-on time of 30 ns, storage time of 250 ns, and fall time of 15 ns. The junction temperature range is up to 150°C, and the storage temperature range is -55°C to +150°C.