Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC4488T-AN 2SC4488T-AN

Description
Manufacturer: ON Semiconductor Win Source Part Number: 855193-2SC4488T-AN Features: Bipolar (BJT) Transistor 100 V 1 A 1 W Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 855193-2SC4488T-AN Features: Bipolar (BJT) Transistor 100 V 1 A 1 W Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1
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Datasheet
Datasheet Summary
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The 2SC4488T-AN is a silicon NPN bipolar transistor designed for general-purpose switching applications. It is packaged in an NMP(Taping) case with dimensions of 6.9 mm × 2.5 mm × 2.54 mm and a mass of 0.275 g. The device has a collector-to-emitter voltage rating of 100 V, a continuous collector current of 1 A, and a power dissipation of 1 W. It features a DC current gain (hFE) range of 200 to 400 for the T rank, a gain-bandwidth product of 120 MHz, and a collector-to-emitter saturation voltage of 0.4 V at 400 mA collector current. Switching times include a turn-on time of 80 ns and a fall time of 50 ns. The junction temperature range is -55°C to 150°C. The part meets JEITA, JEDEC SC-71 package standards and is RoHS compliant. It is shipped in 2,500-piece reels.

Datasheet Summary
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The 2SC4488T-AN is a silicon NPN bipolar transistor designed for general-purpose switching applications. It is packaged in an NMP(Taping) case with dimensions of 6.9 mm × 2.5 mm × 2.54 mm and a mass of 0.275 g. The device has a collector-to-emitter voltage rating of 100 V, a continuous collector current of 1 A, and a power dissipation of 1 W. It features a DC current gain (hFE) range of 200 to 400 for the T rank, a gain-bandwidth product of 120 MHz, and a collector-to-emitter saturation voltage of 0.4 V at 400 mA collector current. Switching times include a turn-on time of 80 ns and a fall time of 50 ns. The junction temperature range is -55°C to 150°C. The part meets JEITA, JEDEC SC-71 package standards and is RoHS compliant. It is shipped in 2,500-piece reels.

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TRANSISTORS - Transistors (BJT) - Single - 2SC4488T-AN - 855193-2SC4488T-AN - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC4488T-AN
855193-2SC4488T-AN
TRANSISTORS - Transistors (BJT) - Single - 2SC4488T-AN 855193-2SC4488T-AN
Manufacturer: ON Semiconductor Win Source Part Number: 855193-2SC4488T-AN Features: Bipolar (BJT) Transistor 100 V 1 A 1 W Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: ON Semiconductor
Win Source Part Number: 855193-2SC4488T-AN
Features: Bipolar (BJT) Transistor 100 V 1 A 1 W
Package: Bulk
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 855193-2SC4488T-AN
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC4488T-AN
Package Type SOT3
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