Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC4399-4-TL-E 2SC4399-4-TL-E

The 2SC4399 is a silicon NPN epitaxial planar transistor designed for high-frequency general-purpose amplifier applications. It is housed in an ultrasmall-sized package with dimensions of 2.0 mm × 0.65 mm × 0.3 mm and has a 3-pin configuration. The device has a collector-to-emitter voltage rating of 20 V, a collector current rating of 30 mA, and a power dissipation of 150 mW. With a typical power gain of 25 dB at 100 MHz and a gain-bandwidth product of 320 MHz, it is suited for RF amplification. The hFE rank for the -4 variant is 90 to 180, as specified under VCE=6 V and IC=1 mA conditions. It meets the AEC-Q200 standard for automotive applications and is rated for a junction temperature up to 150°C and a storage temperature range of -55°C to +150°C.