Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC4075E 2SC4075E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 855185-2SC4075E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0095
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 855185-2SC4075E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0095
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Datasheet
Datasheet Summary
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The 2SC4075E is an NPN triple diffused planar silicon transistor for color TV chroma and audio output applications, housed in a TO-220ML package measuring 10.0 mm × 6.5 mm × 4.5 mm. It has a collector-to-base voltage rating of 300 V, collector-to-emitter voltage of 300 V, and a continuous collector current of 200 mA. Pulse collector current is rated at 700 mA. Collector dissipation is 10 W at Tc=25°C. Junction temperature is rated to 150°C, with storage temperature ranging from -55°C to +150°C. The DC current gain (hFE) is 100 to 200 at IC=10 mA and VCE=10 V. Gain-bandwidth product is 50 MHz at VCE=30 V and IC=10 mA. Output capacitance is 5.3 pF at VCB=50 V and f=1 MHz. Collector-to-emitter saturation voltage is 2.0 V at IC=50 mA and IB=5 mA. The device meets RoHS standards.

Datasheet Summary
Powered by GS/AI

The 2SC4075E is an NPN triple diffused planar silicon transistor for color TV chroma and audio output applications, housed in a TO-220ML package measuring 10.0 mm × 6.5 mm × 4.5 mm. It has a collector-to-base voltage rating of 300 V, collector-to-emitter voltage of 300 V, and a continuous collector current of 200 mA. Pulse collector current is rated at 700 mA. Collector dissipation is 10 W at Tc=25°C. Junction temperature is rated to 150°C, with storage temperature ranging from -55°C to +150°C. The DC current gain (hFE) is 100 to 200 at IC=10 mA and VCE=10 V. Gain-bandwidth product is 50 MHz at VCE=30 V and IC=10 mA. Output capacitance is 5.3 pF at VCB=50 V and f=1 MHz. Collector-to-emitter saturation voltage is 2.0 V at IC=50 mA and IB=5 mA. The device meets RoHS standards.

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TRANSISTORS - Transistors (BJT) - Single - 2SC4075E - 855185-2SC4075E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC4075E
855185-2SC4075E
TRANSISTORS - Transistors (BJT) - Single - 2SC4075E 855185-2SC4075E
Manufacturer: ON Semiconductor Win Source Part Number: 855185-2SC4075E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0095

Manufacturer: ON Semiconductor
Win Source Part Number: 855185-2SC4075E
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.21.0095

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 855185-2SC4075E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC4075E
Package Type SOT3
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