Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3950E 2SC3950E

The 2SC3950E is an NPN silicon transistor intended for high-definition CRT display video output and wide-band amplifier applications. It is housed in a TO-126 plastic package with a micaless design. The device has a maximum collector-to-emitter voltage of 20 V, a continuous collector current of 500 mA, and a collector dissipation of 5 W at Tc=25°C. It features a gain-bandwidth product of 2.0 GHz and a collector-to-base capacitance of 6.0 pF at VCB=10 V and f=1 MHz. The current gain (hFE) ranges from 100 to 200 for the E rank at IC=50 mA and VCE=5 V. The junction temperature rating is 150°C, and the storage temperature range is -55°C to +150°C.