Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3787S 2SC3787S

Description
Manufacturer: ON Semiconductor Win Source Part Number: 855175-2SC3787S Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 855175-2SC3787S Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075
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Datasheet
Datasheet Summary
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The 2SC3787S is an NPN silicon transistor in the TO-126ML package, designed for switching applications such as predrivers for 100W power amplifiers. It has a collector-to-emitter voltage rating of 160 V, a continuous collector current of 140 mA, and a power dissipation of 1.3 W at Ta = 25°C, with increased dissipation to 10 W at Tc = 25°C. The device features a DC current gain (hFE) of 100 to 400 at VCE = -5 V and IC = -10 mA, a gain-bandwidth product of 150 MHz, and an output capacitance of 3.0 to 4.0 pF. The TO-126ML package includes a plastic-covered heat sink for high-density mounting. The 2SC3787S is a variant of the 2SA1477/2SC3787 series, with hFE binning according to specifications: S-grade devices have a gain of 140 to 280 at 10 mA bias. All specified electrical characteristics and package details apply to this variant.

Datasheet Summary
Powered by GS/AI

The 2SC3787S is an NPN silicon transistor in the TO-126ML package, designed for switching applications such as predrivers for 100W power amplifiers. It has a collector-to-emitter voltage rating of 160 V, a continuous collector current of 140 mA, and a power dissipation of 1.3 W at Ta = 25°C, with increased dissipation to 10 W at Tc = 25°C. The device features a DC current gain (hFE) of 100 to 400 at VCE = -5 V and IC = -10 mA, a gain-bandwidth product of 150 MHz, and an output capacitance of 3.0 to 4.0 pF. The TO-126ML package includes a plastic-covered heat sink for high-density mounting. The 2SC3787S is a variant of the 2SA1477/2SC3787 series, with hFE binning according to specifications: S-grade devices have a gain of 140 to 280 at 10 mA bias. All specified electrical characteristics and package details apply to this variant.

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TRANSISTORS - Transistors (BJT) - Single - 2SC3787S - 855175-2SC3787S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3787S
855175-2SC3787S
TRANSISTORS - Transistors (BJT) - Single - 2SC3787S 855175-2SC3787S
Manufacturer: ON Semiconductor Win Source Part Number: 855175-2SC3787S Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075

Manufacturer: ON Semiconductor
Win Source Part Number: 855175-2SC3787S
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 855175-2SC3787S
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC3787S
Package Type SOT3
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