Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3779D 2SC3779D

The 2SC3779D is an NPN silicon epitaxial planar transistor designed for UHF low-noise and wide-band amplifier applications. It features a typical noise figure of 1.5 dB at 0.9 GHz and a maximum available power gain of 14 dB at 0.9 GHz, with a cutoff frequency of 5 GHz. The device is packaged in a 3-pin case with dimensions of 6.0 mm length, 4.0 mm width, and 1.3 mm lead spacing. It operates with a maximum collector-to-emitter voltage of 12 V, collector current of 100 mA, and power dissipation of 600 mW. The hFE gain range for the D rating is 60 to 120 at VCE=10 V and IC=20 mA. The part meets the standard operating temperature range of -55°C to +150°C and is suited for applications requiring high-frequency performance with low noise.