Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3736-T2-AZ 2SC3736-T2-AZ

The 2SC3736 is an NPN silicon epitaxial transistor designed for high-speed switching and power amplifier applications. It is packaged in a Power Mini Mold case with dimensions of 8.0 mm × 5.2 mm × 1.6 mm and has three pins: emitter, collector (fin), and base. The device has a collector-to-emitter voltage rating of 45 V, a collector current rating of 1.0 A (DC) and 2.0 A (pulse), and a total power dissipation of 2.0 W. It features a low collector saturation voltage of 0.4 V max at 500 mA collector current, a DC current gain (hFE) range of 60 to 200, and a gain-bandwidth product of 300 to 380 MHz. The transistor complies with the Standard quality grade for use in consumer, industrial, and communications applications.