Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3708S-AA 2SC3708S-AA

Description
Manufacturer: ON Semiconductor Win Source Part Number: 855170-2SC3708S-AA Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 855170-2SC3708S-AA Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined
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Datasheet
Datasheet Summary
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The 2SC3708 is an NPN epitaxial planar silicon transistor designed for low-frequency driver applications, including audio amplification. It is packaged in a TO-92 style case with dimensions of 6.0 mm in height, 4.0 mm in width, and 1.3 mm lead spacing. The device has a collector-to-emitter voltage rating of 80 V, a collector current of 500 mA, and a collector dissipation of 600 mW. The DC current gain (hFE) ranges from 140 to 280 for the S-rank variant. It has a gain-bandwidth product of 120 MHz and a collector-to-emitter saturation voltage of 0.16 V at 400 mA collector current. Operating temperature ranges from -55°C to +150°C. The transistor is intended for standard electronics applications and is not rated for critical life-sustaining systems.

Datasheet Summary
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The 2SC3708 is an NPN epitaxial planar silicon transistor designed for low-frequency driver applications, including audio amplification. It is packaged in a TO-92 style case with dimensions of 6.0 mm in height, 4.0 mm in width, and 1.3 mm lead spacing. The device has a collector-to-emitter voltage rating of 80 V, a collector current of 500 mA, and a collector dissipation of 600 mW. The DC current gain (hFE) ranges from 140 to 280 for the S-rank variant. It has a gain-bandwidth product of 120 MHz and a collector-to-emitter saturation voltage of 0.16 V at 400 mA collector current. Operating temperature ranges from -55°C to +150°C. The transistor is intended for standard electronics applications and is not rated for critical life-sustaining systems.

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TRANSISTORS - Transistors (BJT) - Single - 2SC3708S-AA - 855170-2SC3708S-AA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3708S-AA
855170-2SC3708S-AA
TRANSISTORS - Transistors (BJT) - Single - 2SC3708S-AA 855170-2SC3708S-AA
Manufacturer: ON Semiconductor Win Source Part Number: 855170-2SC3708S-AA Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined

Manufacturer: ON Semiconductor
Win Source Part Number: 855170-2SC3708S-AA
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 855170-2SC3708S-AA
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC3708S-AA
Package Type SOT3
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