Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3503E 2SC3503E

The 2SC3503 is an NPN silicon transistor designed for high-definition CRT display and video output applications. It comes in a TO-126 package measuring 8.0 mm in length, 5.1 mm in width, and 2.7 mm in height. The device has a collector-to-base voltage rating of 300 V, a collector-to-emitter voltage rating of 300 V, and a maximum collector current of 100 mA. Its gain-bandwidth product is 150 MHz, with a reverse transfer capacitance of 1.8 pF at 30 V and 1 MHz. The collector dissipation is 7 W at Tc=25°C, and the junction temperature range is -55°C to 150°C. The hFE gain is classified as E range: 100 to 200 at IC=-10 mA and VCE=-10 V. These specifications apply to the series, of which 2SC3503E is a variant.