Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC2909S 2SC2909S

The 2SC2909 is an NPN epitaxial planar silicon transistor designed for high-voltage switching and AF 60W predriver applications. It is supplied in a TO-92 package, measuring 5.0 mm in length, 4.0 mm in width, and 1.3 mm in lead spacing. The device has a collector-to-emitter voltage rating of -160 V, a collector current of -70 mA, and a collector dissipation of 600 mW at 25°C. The junction temperature is rated to 150°C. Electrical characteristics include a minimum DC current gain (hFE) of 140 at VCE = -5 V and IC = -10 mA, a gain-bandwidth product of 150 MHz, and an output capacitance of 2.0 pF at VCB = -10 V. Switching times are 0.1 µs for turn-on and 0.2 µs for fall time. The part meets the ABSOLUTE MAXIMUM RATINGS for silicon bipolar transistors under standard operating conditions, and is marked with SANYO Electric Co., Ltd. product identification.