Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC2812-7-TB-E 2SC2812-7-TB-E

The 2SC2812 is an NPN silicon transistor for low-frequency general-purpose amplifier applications. It is housed in a miniature three-pin package measuring 5.2 mm in length, 3.0 mm in width, and 1.1 mm in height. Maximum ratings include a collector-to-emitter voltage of 50 V, collector current of 150 mA, and power dissipation of 200 mW. DC current gain (hFE) is classified as Rank 7: 300 to 600 at VCE=6 V and IC=1 mA. The gain-bandwidth product is 180 MHz at VCE=-6 V and IC=-10 mA. The device meets no specified industry standards beyond operating temperature ranges of -55 to +150 °C.