Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC2735JTR-E 2SC2735JTR-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855147-2SC2735JTR-E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 91 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855147-2SC2735JTR-E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 91 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075
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Datasheet
Datasheet Summary
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The 2SC2735 is a silicon NPN epitaxial transistor designed for UHF/VHF local oscillator and frequency converter applications. It is packaged in the MPAK (RENESAS package code PLSP0003ZB-A) with dimensions of 1.5 mm by 1.0 mm and a typical mass of 0.011 g. The device has a collector-to-base voltage rating of 30 V, collector-to-emitter voltage of 20 V, emitter-to-base voltage of 3 V, maximum collector current of 50 mA, and collector power dissipation of 150 mW. The junction temperature maximum is 150°C, and the storage temperature range is -55°C to +150°C. The part is produced in 8 mm emboss-taped reels of 3000 units. The product is classified as "Standard" quality and is not intended for life-critical applications.

Datasheet Summary
Powered by GS/AI

The 2SC2735 is a silicon NPN epitaxial transistor designed for UHF/VHF local oscillator and frequency converter applications. It is packaged in the MPAK (RENESAS package code PLSP0003ZB-A) with dimensions of 1.5 mm by 1.0 mm and a typical mass of 0.011 g. The device has a collector-to-base voltage rating of 30 V, collector-to-emitter voltage of 20 V, emitter-to-base voltage of 3 V, maximum collector current of 50 mA, and collector power dissipation of 150 mW. The junction temperature maximum is 150°C, and the storage temperature range is -55°C to +150°C. The part is produced in 8 mm emboss-taped reels of 3000 units. The product is classified as "Standard" quality and is not intended for life-critical applications.

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TRANSISTORS - Transistors (BJT) - Single - 2SC2735JTR-E - 855147-2SC2735JTR-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC2735JTR-E
855147-2SC2735JTR-E
TRANSISTORS - Transistors (BJT) - Single - 2SC2735JTR-E 855147-2SC2735JTR-E
Manufacturer: Renesas Electronics America Win Source Part Number: 855147-2SC2735JTR-E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 91 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075

Manufacturer: Renesas Electronics America
Win Source Part Number: 855147-2SC2735JTR-E
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.21.0075

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 855147-2SC2735JTR-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC2735JTR-E
Package Type SOT3
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