Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SB859C-E 2SB859C-E

The 2SB859 is a silicon PNP bipolar junction transistor designed for low-frequency power amplifier applications, typically used as a complementary pair with the 2SD1135. It is packaged in a TO-220AB case with a flanged collector. The device has a collector-to-base voltage rating of -100 V, a collector-to-emitter voltage rating of -80 V, and can handle a continuous collector current of -4 A with a maximum collector power dissipation of 40 W at 25°C. The junction temperature range is -45°C to 150°C, and the DC current gain (hFE) ranges from 60 to 200 depending on collector current. The gain-bandwidth product is 20 MHz, and the collector output capacitance is 75 pF at -20 V. The transistor is not intended for medical, automotive, aerospace, or life-support applications without manufacturer approval.