Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SB1167T 2SB1167T

The 2SB1167 is a PNP silicon transistor designed for switching applications such as relay drivers and high-speed inverters. It is packaged in a TO-126LP case, with dimensions of 8.0 mm × 4.0 mm. The device has a collector-to-emitter voltage rating of -100 V, a collector current rating of -3 A, and a collector dissipation of 20 W at Tc=25°C. It features a low collector-to-emitter saturation voltage of -150 mV to -500 mV at -1.5 A collector current, a gain-bandwidth product of 130 MHz, and switching times of 100 ns turn-on and 50 ns fall time. The transistor complies with AEC-Q200 and RoHS standards. The 2SB1167T variant is part of this series, with hFE gain classified in the T-rank range of 200 to 400 at -0.5 A collector current.