Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SB1165S 2SB1165S

The 2SB1165 is a PNP silicon transistor designed for switching applications such as relay drivers and high-speed inverters. It is packaged in a TO-126LP case with dimensions of 8.0 mm × 5.1 mm × 4.0 mm, featuring an emitter, collector, and base configuration. The device has a collector-to-emitter voltage rating of 50 V, a continuous collector current of 5 A, and a maximum collector dissipation of 20 W at Tc=25°C. It exhibits low collector-to-emitter saturation voltage, a gain-bandwidth product of 180 MHz, and fast switching times including a turn-on time of 50 ns and a fall time of 20 ns. The hFE current gain is classified into quartiles from 70 to 400 at IC=0.5 A, with the 2SB1165S variant falling in the S rank (140 to 280). The transistor meets the absolute maximum ratings specified at up to 150°C junction temperature and is rated for industrial humidity and thermal conditions.