Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SB1134S 2SB1134S

The 2SB1134S is a PNP silicon transistor from the 2SB1134/2SD1667 series, designed for high-current switching applications such as relay drivers and inverters. It is packaged in a TO-220ML case with dimensions of 10.0 mm × 4.5 mm × 2.8 mm, featuring a micaless design for simplified mounting. The device has a collector-to-emitter voltage rating of −50 V, a continuous collector current of −5 A, and a power dissipation of 2 W on a ceramic board. The collector-to-emitter saturation voltage is −0.4 V maximum at −3 A collector and −0.3 A base current. Current gain (hFE) is classified as 140 to 280 for the S-rank variant. It operates within a junction temperature range of −55°C to 150°C and meets RoHS requirements. Basic switching times include a rise time of 0.1 µs and fall time of 0.2 µs. The part is not explicitly listed, but its series is fully described.