Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA673AC-E 2SA673AC-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855078-2SA673AC-E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0095
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855078-2SA673AC-E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0095
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Datasheet
Datasheet Summary
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The 2SA673AC-E is a silicon PNP epitaxial transistor in a TO-92 package, intended for low-frequency amplification and used as a complementary pair with the 2SC1213 series. It has a collector-to-base voltage rating of -50 V, a collector-to-emitter voltage rating of -50 V, and a collector current rating of -500 mA. The maximum collector power dissipation is 400 mW, with a junction temperature rating of 150°C and a storage temperature range of -55°C to +150°C. The DC current gain (hFE) ranges from 60 to 320, depending on the grade, with a collector-emitter saturation voltage of up to -0.6 V at -150 mA collector current and -15 mA base current.

Datasheet Summary
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The 2SA673AC-E is a silicon PNP epitaxial transistor in a TO-92 package, intended for low-frequency amplification and used as a complementary pair with the 2SC1213 series. It has a collector-to-base voltage rating of -50 V, a collector-to-emitter voltage rating of -50 V, and a collector current rating of -500 mA. The maximum collector power dissipation is 400 mW, with a junction temperature rating of 150°C and a storage temperature range of -55°C to +150°C. The DC current gain (hFE) ranges from 60 to 320, depending on the grade, with a collector-emitter saturation voltage of up to -0.6 V at -150 mA collector current and -15 mA base current.

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TRANSISTORS - Transistors (BJT) - Single - 2SA673AC-E - 855078-2SA673AC-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA673AC-E
855078-2SA673AC-E
TRANSISTORS - Transistors (BJT) - Single - 2SA673AC-E 855078-2SA673AC-E
Manufacturer: Renesas Electronics America Win Source Part Number: 855078-2SA673AC-E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0095

Manufacturer: Renesas Electronics America
Win Source Part Number: 855078-2SA673AC-E
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.21.0095

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 855078-2SA673AC-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SA673AC-E
Package Type SOT3
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