Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA1540E 2SA1540E

The 2SA1540 is a PNP silicon epitaxial planar transistor designed for high-definition CRT display video output applications. It is housed in a TO-126 plastic package measuring 8.0 mm × 5.7 mm × 3.3 mm. The device has a collector-to-base voltage rating of 200 V, a collector current rating of 100 mA, and a power dissipation of 1.3 W. It exhibits a gain-bandwidth product of 300 MHz and a reverse transfer capacitance of 1.8 pF. The current gain (hFE) for the E grade is specified between 100 and 200 at a collector current of 10 mA. The transistor is complementary to the 2SC3955 NPN device and is manufactured using the FBET process.