Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA1352E 2SA1352E

The 2SA1352 is a PNP silicon transistor for ultrahigh-definition CRT video output applications, packaged in a TO-126 case. It has a collector-to-base voltage rating of 200 V, collector-to-emitter voltage of 200 V, and maximum collector current of 100 mA. Power dissipation is 1.2 W at TC=25°C with a junction temperature rating of 150°C. The reverse transfer capacitance is 1.2 pF, and the gain-bandwidth product is 70 MHz. Current gain hFE ranges from 40 to 320 at IC=10 mA and VCE=40 V.