Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA1248S 2SA1248S

Description
Manufacturer: ON Semiconductor Win Source Part Number: 855022-2SA1248S Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 855022-2SA1248S Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075
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Datasheet
Datasheet Summary
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2SA1248 is a PNP epitaxial planar silicon transistor designed for switching applications such as color TV sound output, converters, and inverters. It is packaged in a TO-126 case with dimensions of 8.0 mm length, 5.1 mm width, and 2.1 mm height. The device has a collector-to-emitter voltage rating of 160 V, a collector current of 700 mA, and a collector dissipation of 1 W at Tc=25°C. The junction temperature is rated to 150°C. The DC current gain (hFE) ranges from 140 to 280 for the S-rank variant, with a gain-bandwidth product of 120 MHz. It meets the AEC-Q200 qualification standard. The switching times are specified with a turn-on time of 60 ns, storage time of 900 ns, and fall time of 60 ns.

Datasheet Summary
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2SA1248 is a PNP epitaxial planar silicon transistor designed for switching applications such as color TV sound output, converters, and inverters. It is packaged in a TO-126 case with dimensions of 8.0 mm length, 5.1 mm width, and 2.1 mm height. The device has a collector-to-emitter voltage rating of 160 V, a collector current of 700 mA, and a collector dissipation of 1 W at Tc=25°C. The junction temperature is rated to 150°C. The DC current gain (hFE) ranges from 140 to 280 for the S-rank variant, with a gain-bandwidth product of 120 MHz. It meets the AEC-Q200 qualification standard. The switching times are specified with a turn-on time of 60 ns, storage time of 900 ns, and fall time of 60 ns.

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TRANSISTORS - Transistors (BJT) - Single - 2SA1248S - 855022-2SA1248S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1248S
855022-2SA1248S
TRANSISTORS - Transistors (BJT) - Single - 2SA1248S 855022-2SA1248S
Manufacturer: ON Semiconductor Win Source Part Number: 855022-2SA1248S Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075

Manufacturer: ON Semiconductor
Win Source Part Number: 855022-2SA1248S
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 855022-2SA1248S
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SA1248S
Package Type SOT3
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