Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA1052MCTR-E 2SA1052MCTR-E

The 2SA1052MCTR-E is a silicon PNP bipolar junction transistor in an MPAK package, designed for low-frequency amplifier applications. It features a collector-to-base voltage rating of -30 V, collector-to-emitter voltage of -30 V, and a maximum collector current of -100 mA. The device dissipates up to 150 mW and operates with a junction temperature up to 150 °C. The MPAK package has dimensions of 1.3 mm × 2.8 mm × 1.2 mm and weighs approximately 0.011 g. It is supplied in a 178 mm reel with 8 mm emboss taping, in quantities of 3000 per reel. The transistor is classified as "Standard" quality per Renesas grading and complies with RoHS. Its DC current gain (hFE) is grouped in grades C (160-320) or D (250-500), with the "MCTR-E" suffix indicating the grade and packaging.