Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2N3904TF 2N3904TF

The 2N3904TF is an NPN silicon transistor designed for general-purpose amplification and switching applications, with a continuous collector current of 200 mA, collector-emitter voltage rating of 40 V, and power dissipation of 625 mW. It is packaged in a TO-92 3L case and supplied in tape and reel format. The device operates over a junction temperature range of -55°C to 150°C and meets standard thermal and electrical performance characteristics for its series, including a current gain (hFE) of 100 to 300 at 10 mA collector current and a collector-emitter saturation voltage of 0.2 V at 10 mA collector current and 1 mA base current. The transition frequency (fT) is 300 MHz. The 2N3904TF shares all key specifications with the 2N3904 series, including the same pinout, dielectric isolation, and base-emitter turn-on voltage characteristics.