Renesas Electronics Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM X28HC256JZ-90T1

Description
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decorati on: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years
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Description
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decorati on: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years
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Supplier Links
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM - X28HC256JZ-90T1 - Renesas Electronics Corporation
Milpitas, CA, USA
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM
X28HC256JZ-90T1
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM X28HC256JZ-90T1
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decorati on: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decoration: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years

Supplier's Site Datasheet
Memory - 20-X28HC256JZ-90T1TR-ND - DigiKey
Thief River Falls, MN, United States
IC EEPROM 256KBIT PAR 32PLCC

IC EEPROM 256KBIT PAR 32PLCC

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
X28HC256JZ-90T1
Integrated Circuits (ICs) - Memory - Memory X28HC256JZ-90T1
32K X 8 EEPROM,CMOS,HIGHSPEE D,32

32K X 8 EEPROM,CMOS,HIGHSPEED,32

Supplier's Site
Memory - X28HC256JZ-90T1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 90 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit Parallel 90 ns 32-PLCC (13.97x11.43)

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Technical Specifications

  Renesas Electronics Corporation DigiKey Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number X28HC256JZ-90T1 20-X28HC256JZ-90T1TR-ND X28HC256JZ-90T1 X28HC256JZ-90T1
Product Name 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 90 ns 90 ns
Package Type PDIP28, PLCC32, SOIC28 PLCC; 32-LCC (J-Lead) 32-LCC (J-Lead)
Operating Current 60 mA
Standby Current 0.5000 mA
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