Renesas Electronics Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM X28HC256JZ-15

Description
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decorati on: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years
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Description
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decorati on: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years
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256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM - X28HC256JZ-15 - Renesas Electronics Corporation
Milpitas, CA, USA
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM
X28HC256JZ-15
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM X28HC256JZ-15
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decorati on: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decoration: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years

Supplier's Site Datasheet
Integrated Circuits (ICs) Memory Memory -  - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) Memory Memory
Integrated Circuits (ICs) Memory Memory
Alternative Parts (Cross-Reference): Cross Manufacturer: Renesas Electronics America Inc Category: Integrated Circuits (ICs) Memory Memory Package: Tube Product Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kbit Memory Organization: 32K x 8

Alternative Parts (Cross-Reference): Cross
Manufacturer: Renesas Electronics America Inc
Category: Integrated Circuits (ICs) Memory Memory
Package: Tube
Product Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kbit
Memory Organization: 32K x 8

Buy Now Datasheet
Memory IC and Storage Component - 774-X28HC256JZ-15 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-X28HC256JZ-15
Memory IC and Storage Component 774-X28HC256JZ-15
32K X 8 EEPROM,CMOS,HIGH SPEED,3 Product overview: X28HC256JZ-15 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-X28HC256JZ-15 can be used for catalog matching and distributor lookup.

32K X 8 EEPROM,CMOS,HIGH SPEED,3 Product overview: X28HC256JZ-15 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-X28HC256JZ-15 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - X28HC256JZ-15 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 150 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit Parallel 150 ns 32-PLCC (13.97x11.43)

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
X28HC256JZ-15
Integrated Circuits (ICs) - Memory - Memory X28HC256JZ-15
32K X 8 EEPROM,CMOS,HIGH SPEED,3

32K X 8 EEPROM,CMOS,HIGH SPEED,3

Supplier's Site

Technical Specifications

  Renesas Electronics Corporation Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number X28HC256JZ-15 774-X28HC256JZ-15 X28HC256JZ-15 X28HC256JZ-15
Product Name 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM Integrated Circuits (ICs) Memory Memory Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Access Time 90 ns 150 ns 150 ns
Package Type PDIP28, PLCC32, SOIC28 Tube 32-LCC (J-Lead)
Operating Current 60 mA 60 mA
Standby Current 0.5000 mA
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