Renesas Electronics Corporation Memory - X28C513EMB-25 X28C513EMB-25

The X28C513EMB-25 is a 512Kbit EEPROM memory device from Quarktwin Technology Ltd., designed for parallel access with an access time of 250 ns. It operates on a single 5V supply, eliminating the need for external high voltages or complex programming algorithms. The device supports byte and page write operations, allowing for a 128-byte page write capability, which results in a write cycle time of approximately 39 µs per byte and enables full memory writes in less than 2.5 seconds. This EEPROM features data polling and toggle bit polling for early write cycle completion detection, along with a software data protection option to prevent inadvertent writes. It is built using low power CMOS technology, with an active current consumption of 50 mA and a standby current of 500 µA. The device is rated for 100,000 write cycles and offers data retention of up to 100 years. The X28C513EMB-25 is available in a 32-lead LCC package and is compliant with Mil-STD-883 standards, making it suitable for military and aerospace applications.