Renesas Electronics Corporation Memory UPD46365364BF1-E40-EQ1-A

Description
QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165

QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165

Supplier's Site Datasheet
Memory IC

Memory IC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory UPD46365364BF1-E40-EQ1-A
QDR SRAM, 1MX36, 0.45NS

QDR SRAM, 1MX36, 0.45NS

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number UPD46365364BF1-E40-EQ1-A UPD46365364BF1-E40-EQ1-A UPD46365364BF1-E40-EQ1-A
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - 309977-128 01 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71V016SA12BFI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details