Renesas Electronics Corporation Memory UPD46185364BF1-E40Y-EQ1-A

Description
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165

QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165

Supplier's Site Datasheet
Memory IC

Memory IC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - UPD46185364BF1-E40Y-EQ1-A - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
UPD46185364BF1-E40Y-EQ1-A
Integrated Circuits (ICs) - Memory UPD46185364BF1-E40Y-EQ1-A
QDR SRAM, 512KX36, 0.45NS

QDR SRAM, 512KX36, 0.45NS

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number UPD46185364BF1-E40Y-EQ1-A UPD46185364BF1-E40Y-EQ1-A UPD46185364BF1-E40Y-EQ1-A
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 71V2556S133BG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.2 ns
Density 4500 kbits
View Details
SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DWR - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
6 suppliers
Memory - AS5C512K8 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details