Renesas Electronics Corporation Integrated Circuits (ICs) - Memory UPD46184362BF1-E33-EQ1-A

Description
DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet
Description
DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165

DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - UPD46184362BF1-E33-EQ1-A - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
UPD46184362BF1-E33-EQ1-A
Integrated Circuits (ICs) - Memory UPD46184362BF1-E33-EQ1-A
DDR SRAM, 512KX36, 0.45NS

DDR SRAM, 512KX36, 0.45NS

Supplier's Site
Memory IC

Memory IC

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number UPD46184362BF1-E33-EQ1-A UPD46184362BF1-E33-EQ1-A UPD46184362BF1-E33-EQ1-A
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

 - 93L425DMQB40 - Rochester Electronics
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
4 suppliers
Memory - CY14MB064J1A-SXIT - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category NVSRAM; NVSRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64 kbits
View Details
2 suppliers
Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details