Renesas Electronics Corporation Memory UPD44165362BF5-E50-EQ3-A

The UPD44165362BF5-E50-EQ3-A is a synchronous quad data rate static RAM (SRAM) with a configuration of 524,288 words by 36 bits. It operates with a power supply voltage of 1.8 ¬± 0.1 V and is housed in a 165-pin plastic BGA package. This memory device supports high-speed operation with a maximum clock frequency of 200 MHz and a cycle time of 5.0 ns. It features a dual-port architecture allowing for independent read and write operations, enabling concurrent transactions and 100% bus utilization during DDR read and write operations. The device includes PLL circuitry for enhanced timing accuracy and user-programmable output impedance ranging from 35 to 70 Oc. Additionally, it has a clock-stop capability that allows for normal operation to resume within 20 Oºs after the clock is restarted. This product is suitable for applications requiring high speed, low voltage, and high density memory solutions.