Renesas Electronics Corporation Integrated Circuits (ICs) - Memory UPD44165362BF5-E40-EQ3

Description
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet
Description
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165

QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory UPD44165362BF5-E40-EQ3
QDR SRAM, 512KX36, 0.45NS

QDR SRAM, 512KX36, 0.45NS

Supplier's Site
Memory IC

Memory IC

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number UPD44165362BF5-E40-EQ3 UPD44165362BF5-E40-EQ3 UPD44165362BF5-E40-EQ3
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71T75902S75BGG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 7.5 ns
Density 18000 kbits
View Details
Memory - 28232478 B - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details