Renesas Electronics Corporation
Integrated Circuits (ICs) - Memory
UPD44164182BF5-E40X-EQ3
Description
DDR SRAM, 1MX18, 0.45ns
-
Rochester Electronics
-
Shenzhen Shengyu Electronics Technology Limited
-
Quarktwin Technology Ltd.
Request a Quote
Email Supplier
Datasheet
Description
DDR SRAM, 1MX18, 0.45ns
Request a Quote
Email Supplier
Datasheet
Suppliers
Supplier's Site
Datasheet
Technical Specifications
|
Product Category
|
Memory Chips |
Memory Chips |
Memory Chips |
|
Product Number
|
UPD44164182BF5-E40X-EQ3 |
UPD44164182BF5-E40X-EQ3 |
UPD44164182BF5-E40X-EQ3 |
|
Product Name
|
|
Integrated Circuits (ICs) - Memory |
Memory |
|
Memory Category
|
SRAM Chip
|
|
|
Unlock Full Specs
to access all available technical data
Similar Products
Memory Category
DRAM Chip
Access Time
0.4000 ns
Number of Words
64000 k
View Details
Memory Category
SRAM; SRAM Chip
Access Time
90 ns
Density
16 kbits
View Details
Memory Category
DRAM; DRAM Chip
Access Time
70 to 120 ns
Operating Temperature
-55 to 125 C (-67 to 257 F)
View Details
