Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA603T-T1-A UPA603T-T1-A

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 963607-UPA603T-T1-A Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 50 V Number of Elements: 2 Input Capacitance: 17 pF Power Dissipation: 300 mW Number of Pins: 59 Rise Time: 75 ns Fall Time: 80 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SC Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 300 mW Turn-On Delay Time: 45 ns Continuous Drain Current (ID): 100 mA Turn-Off Delay Time: 25 ns Gate to Source Voltage (Vgs): 16 V Rds On Max: 60 Ω
Request a Quote
Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 963607-UPA603T-T1-A Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 50 V Number of Elements: 2 Input Capacitance: 17 pF Power Dissipation: 300 mW Number of Pins: 59 Rise Time: 75 ns Fall Time: 80 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SC Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 300 mW Turn-On Delay Time: 45 ns Continuous Drain Current (ID): 100 mA Turn-Off Delay Time: 25 ns Gate to Source Voltage (Vgs): 16 V Rds On Max: 60 Ω
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA603T-T1-A - 963607-UPA603T-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA603T-T1-A
963607-UPA603T-T1-A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA603T-T1-A 963607-UPA603T-T1-A
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 963607-UPA603T-T1-A Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 50 V Number of Elements: 2 Input Capacitance: 17 pF Power Dissipation: 300 mW Number of Pins: 59 Rise Time: 75 ns Fall Time: 80 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SC Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 300 mW Turn-On Delay Time: 45 ns Continuous Drain Current (ID): 100 mA Turn-Off Delay Time: 25 ns Gate to Source Voltage (Vgs): 16 V Rds On Max: 60 Ω

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 963607-UPA603T-T1-A
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 50 V
Number of Elements: 2
Input Capacitance: 17 pF
Power Dissipation: 300 mW
Number of Pins: 59
Rise Time: 75 ns
Fall Time: 80 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SC
Popularity: Low
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Power Dissipation: 300 mW
Turn-On Delay Time: 45 ns
Continuous Drain Current (ID): 100 mA
Turn-Off Delay Time: 25 ns
Gate to Source Voltage (Vgs): 16 V
Rds On Max: 60 Ω

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 963607-UPA603T-T1-A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA603T-T1-A
PD 300 milliwatts
Unlock Full Specs
to access all available technical data