Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA3753GR-E1-AT UPA3753GR-E1-AT

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116521-UPA3753GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 1.12W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A Max Gate Charge: 13.4nC @ 10V Max Input Capacitance: 640pF @ 10V Maximum Rds On at Id,Vgs: 56 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1116521-UPA3753GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 1.12W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A Max Gate Charge: 13.4nC @ 10V Max Input Capacitance: 640pF @ 10V Maximum Rds On at Id,Vgs: 56 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA3753GR-E1-AT - 1116521-UPA3753GR-E1-AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA3753GR-E1-AT
1116521-UPA3753GR-E1-AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA3753GR-E1-AT 1116521-UPA3753GR-E1-AT
Manufacturer: Renesas Electronics America Win Source Part Number: 1116521-UPA3753GR-E1 -AT Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 1.12W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A Max Gate Charge: 13.4nC @ 10V Max Input Capacitance: 640pF @ 10V Maximum Rds On at Id,Vgs: 56 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1116521-UPA3753GR-E1-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.12W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5A
Max Gate Charge: 13.4nC @ 10V
Max Input Capacitance: 640pF @ 10V
Maximum Rds On at Id,Vgs: 56 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1116521-UPA3753GR-E1-AT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA3753GR-E1-AT
Polarity N-Channel
V(BR)DSS 60 volts
PD 1120 milliwatts
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