Renesas Electronics Corporation Single FETs, MOSFETs UPA2825T1S-E2-AT

N-Channel 30V 24A (Tc) 1.5W (Ta), 16.5W (Tc) Surface Mount 8-HWSON (3.3x3.3)

MOSFET N-CH 30V 8HVSON Product overview: UPA2825T1S-E2-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2825T1S-E2-AT can be used for catalog matching and distributor lookup.

Manufacturer: Renesas Electronics America
Win Source Part Number: 053578-UPA2825T1S-E2-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc)
Family Name: uPA2825T1S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Tc)
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 2600pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): RQ3E180BNTB; NVTFS4C08NWFTAG; NVTFS4C08NTAG;
Introduction Date: May 29, 2012
ECCN: EAR99
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance