Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2825T1S-E2-AT UPA2825T1S-E2-AT

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 053578-UPA2825T1S-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc) Family Name: uPA2825T1S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Max Gate Charge: 57nC @ 10V Max Input Capacitance: 2600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.6 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): RQ3E180BNTB; NVTFS4C08NWFTAG; NVTFS4C08NTAG; Introduction Date: May 29, 2012 ECCN: EAR99 Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 053578-UPA2825T1S-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc) Family Name: uPA2825T1S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Max Gate Charge: 57nC @ 10V Max Input Capacitance: 2600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.6 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): RQ3E180BNTB; NVTFS4C08NWFTAG; NVTFS4C08NTAG; Introduction Date: May 29, 2012 ECCN: EAR99 Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2825T1S-E2-AT - 053578-UPA2825T1S-E2-AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2825T1S-E2-AT
053578-UPA2825T1S-E2-AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2825T1S-E2-AT 053578-UPA2825T1S-E2-AT
Manufacturer: Renesas Electronics America Win Source Part Number: 053578-UPA2825T1S-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc) Family Name: uPA2825T1S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Max Gate Charge: 57nC @ 10V Max Input Capacitance: 2600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.6 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): RQ3E180BNTB; NVTFS4C08NWFTAG; NVTFS4C08NTAG; Introduction Date: May 29, 2012 ECCN: EAR99 Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 053578-UPA2825T1S-E2-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc)
Family Name: uPA2825T1S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Tc)
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 2600pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): RQ3E180BNTB; NVTFS4C08NWFTAG; NVTFS4C08NTAG;
Introduction Date: May 29, 2012
ECCN: EAR99
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - UPA2825T1S-E2-AT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
UPA2825T1S-E2-AT-ND
Single FETs, MOSFETs UPA2825T1S-E2-AT-ND
N-Channel 30V 24A (Tc) 1.5W (Ta), 16.5W (Tc) Surface Mount 8-HWSON (3.3x3.3)

N-Channel 30V 24A (Tc) 1.5W (Ta), 16.5W (Tc) Surface Mount 8-HWSON (3.3x3.3)

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MOSFET MOSFET

MOSFET MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UPA2825T1S-E2-AT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2825T1S-E2-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2825T1S-E2-AT
MOSFET N-CH 30V 8HVSON

MOSFET N-CH 30V 8HVSON

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 053578-UPA2825T1S-E2-AT UPA2825T1S-E2-AT-ND UPA2825T1S-E2-AT UPA2825T1S-E2-AT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2825T1S-E2-AT Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1500 to 16500 milliwatts
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