Win Source Part Number: 1380228-UPA2822T1L-E
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
Mfr: Renesas Electronics America Inc
Product Status: Last Time Buy
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-HWSON (3.3x3.3)
Base Product Number: UPA2822
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V
Power Dissipation (Max): 1.5W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET N-CH 30V 34A 8HWSON
| Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1380228-UPA2822T1L-E1-AT | UPA2822T1L-E1-AT | UPA2822T1L-E1-AT |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
