Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs UPA2822T1L-E1-AT

Description
Win Source Part Number: 1380228-UPA2822T1L-E 1-AT Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) Mfr: Renesas Electronics America Inc Product Status: Last Time Buy Package / Case: 8-PowerWDFN Supplier Device Package: 8-HWSON (3.3x3.3) Base Product Number: UPA2822 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V Power Dissipation (Max): 1.5W (Ta) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Description
Win Source Part Number: 1380228-UPA2822T1L-E 1-AT Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) Mfr: Renesas Electronics America Inc Product Status: Last Time Buy Package / Case: 8-PowerWDFN Supplier Device Package: 8-HWSON (3.3x3.3) Base Product Number: UPA2822 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V Power Dissipation (Max): 1.5W (Ta) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1380228-UPA2822T1L-E1-AT - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1380228-UPA2822T1L-E1-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1380228-UPA2822T1L-E1-AT
Win Source Part Number: 1380228-UPA2822T1L-E 1-AT Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) Mfr: Renesas Electronics America Inc Product Status: Last Time Buy Package / Case: 8-PowerWDFN Supplier Device Package: 8-HWSON (3.3x3.3) Base Product Number: UPA2822 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V Power Dissipation (Max): 1.5W (Ta) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1380228-UPA2822T1L-E1-AT
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
Mfr: Renesas Electronics America Inc
Product Status: Last Time Buy
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-HWSON (3.3x3.3)
Base Product Number: UPA2822
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V
Power Dissipation (Max): 1.5W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

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MOSFET MOSFET

MOSFET MOSFET

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Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2822T1L-E1-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2822T1L-E1-AT
MOSFET N-CH 30V 34A 8HWSON

MOSFET N-CH 30V 34A 8HWSON

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1380228-UPA2822T1L-E1-AT UPA2822T1L-E1-AT UPA2822T1L-E1-AT
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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