Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2816T1S-E2-AT UPA2816T1S-E2-AT

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 213741-UPA2816T1S-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HWSON (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A (Tc) Max Gate Charge: 33.4nC @ 10V Max Input Capacitance: 1160pF @ 10V Maximum Gate-Source Voltage: +20V, -25V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 213741-UPA2816T1S-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HWSON (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A (Tc) Max Gate Charge: 33.4nC @ 10V Max Input Capacitance: 1160pF @ 10V Maximum Gate-Source Voltage: +20V, -25V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2816T1S-E2-AT - 213741-UPA2816T1S-E2-AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2816T1S-E2-AT
213741-UPA2816T1S-E2-AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2816T1S-E2-AT 213741-UPA2816T1S-E2-AT
Manufacturer: Renesas Electronics America Win Source Part Number: 213741-UPA2816T1S-E2 -AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HWSON (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A (Tc) Max Gate Charge: 33.4nC @ 10V Max Input Capacitance: 1160pF @ 10V Maximum Gate-Source Voltage: +20V, -25V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 213741-UPA2816T1S-E2-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HWSON (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A (Tc)
Max Gate Charge: 33.4nC @ 10V
Max Input Capacitance: 1160pF @ 10V
Maximum Gate-Source Voltage: +20V, -25V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 17A MOSFET Transistor
278-UPA2816T1S-E2-AT
30V 17A MOSFET Transistor 278-UPA2816T1S-E2-AT
MOSFET P-CH 30V 17A 8HWSON Product overview: UPA2816T1S-E2-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2816T1S-E2-AT can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 17A 8HWSON Product overview: UPA2816T1S-E2-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2816T1S-E2-AT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 559-UPA2816T1S-E2-ATTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-UPA2816T1S-E2-ATTR-ND
Single FETs, MOSFETs 559-UPA2816T1S-E2-ATTR-ND
P-Channel 30V 17A (Tc) 1.5W (Ta) Surface Mount 8-HWSON (3.3x3.3)

P-Channel 30V 17A (Tc) 1.5W (Ta) Surface Mount 8-HWSON (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - 559-UPA2816T1S-E2-ATCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-UPA2816T1S-E2-ATCT-ND
Single FETs, MOSFETs 559-UPA2816T1S-E2-ATCT-ND
MOSFET P-CH 30V 17A 8HWSON

MOSFET P-CH 30V 17A 8HWSON

Buy Now Datasheet
Single FETs, MOSFETs - 559-UPA2816T1S-E2-ATDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-UPA2816T1S-E2-ATDKR-ND
Single FETs, MOSFETs 559-UPA2816T1S-E2-ATDKR-ND
MOSFET P-CH 30V 17A 8HWSON

MOSFET P-CH 30V 17A 8HWSON

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UPA2816T1S-E2-AT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2816T1S-E2-AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2816T1S-E2-AT
MOSFET P-CH 30V 17A 8HWSON

MOSFET P-CH 30V 17A 8HWSON

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 213741-UPA2816T1S-E2-AT 278-UPA2816T1S-E2-AT 559-UPA2816T1S-E2-ATTR-ND UPA2816T1S-E2-AT UPA2816T1S-E2-AT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2816T1S-E2-AT 30V 17A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 1500 milliwatts 1500 milliwatts
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