Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs UPA2800T1L-E1-AY

Description
Win Source Part Number: 1383796-UPA2800T1L-E 1-AY Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Bulk Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN3333 (3.3x3.3) Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 15 V Fake Threat In the Open Market: 66 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Product Status: Obsolete ECCN: EAR99 Standard Package: 369 pcs
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Description
Win Source Part Number: 1383796-UPA2800T1L-E 1-AY Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Bulk Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN3333 (3.3x3.3) Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 15 V Fake Threat In the Open Market: 66 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Product Status: Obsolete ECCN: EAR99 Standard Package: 369 pcs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1383796-UPA2800T1L-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1383796-UPA2800T1L-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1383796-UPA2800T1L-E1-AY
Win Source Part Number: 1383796-UPA2800T1L-E 1-AY Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Bulk Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN3333 (3.3x3.3) Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 15 V Fake Threat In the Open Market: 66 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Product Status: Obsolete ECCN: EAR99 Standard Package: 369 pcs

Win Source Part Number: 1383796-UPA2800T1L-E1-AY
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Package: Bulk
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 15 V
Fake Threat In the Open Market: 66 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America
Product Status: Obsolete
ECCN: EAR99
Standard Package: 369 pcs

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1383796-UPA2800T1L-E1-AY
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Polarity N-Channel
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