Renesas Electronics Corporation Single FETs, MOSFETs UPA2766T1A-E1-AY

Description
MOSFET N-CH 30V 130A 8HVSON
Request a Quote Datasheet
Description
MOSFET N-CH 30V 130A 8HVSON
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - UPA2766T1A-E1-AY - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
UPA2766T1A-E1-AY
Single FETs, MOSFETs UPA2766T1A-E1-AY
MOSFET N-CH 30V 130A 8HVSON

MOSFET N-CH 30V 130A 8HVSON

Supplier's Site Datasheet
30V 130A MOSFET Transistor - 278-UPA2766T1A-E1-AY - ERSAELECTRONICS PTE. LTD.
Singapore
30V 130A MOSFET Transistor
278-UPA2766T1A-E1-AY
30V 130A MOSFET Transistor 278-UPA2766T1A-E1-AY
MOSFET N-CH 30V 130A 8HVSON Product overview: UPA2766T1A-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2766T1A-E1-AY can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 130A 8HVSON Product overview: UPA2766T1A-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-UPA2766T1A-E1-AY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2766T1A-E1-AY - 213740-UPA2766T1A-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2766T1A-E1-AY
213740-UPA2766T1A-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2766T1A-E1-AY 213740-UPA2766T1A-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 213740-UPA2766T1A-E1 -AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HVSON (5.4x5.15) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 130A (Ta) Max Gate Charge: 257nC @ 10V Max Input Capacitance: 10850pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.82 mOhm @ 39A, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 213740-UPA2766T1A-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HVSON (5.4x5.15)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 130A (Ta)
Max Gate Charge: 257nC @ 10V
Max Input Capacitance: 10850pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.82 mOhm @ 39A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFET NPHOTO/NONTRANSIS W/OP FREQ<30MHZ

MOSFET NPHOTO/NONTRANSIS W/OP FREQ<30MHZ

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UPA2766T1A-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UPA2766T1A-E1-AY
MOSFET N-CH 30V 130A 8HVSON

MOSFET N-CH 30V 130A 8HVSON

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number UPA2766T1A-E1-AY 278-UPA2766T1A-E1-AY 213740-UPA2766T1A-E1-AY UPA2766T1A-E1-AY UPA2766T1A-E1-AY
Product Name Single FETs, MOSFETs 30V 130A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - UPA2766T1A-E1-AY MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 130000 milliamps
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